Reducing Resistivity in Interconnect Structures of Integrated Circuits

ABSTRACT

An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, an oxide-based barrier layer directly on sidewalls of the opening, and conductive materials filling the remaining portion of the opening.

This application is a continuation of prior U.S. patent application Ser.No. 12/690,796, filed Jan. 20, 2010, entitled “Reducing Resistivity inInterconnect Structures of Integrated Circuits,” which is acontinuation-in-part of prior U.S. patent application Ser. No.11/429,879, filed on May 8, 2006, entitled “Reducing Resistivity inInterconnect Structures of Integrated Circuits;” these applications arehereby incorporated herein by reference in their entireties.

CROSS-REFERENCE TO RELATED APPLICATION

This application is related to the commonly assigned U.S. patentapplication Ser. No. 11/486,893, filed Jul. 13, 2006, entitled “ReducingResistivity in Interconnect Structures by Forming an Inter-Layer,” whichapplication is incorporated herein by reference.

TECHNICAL FIELD

This invention relates generally to integrated circuits, and moreparticularly to the structure and formation methods of interconnectstructures of integrated circuits.

BACKGROUND

In the manufacture of integrated circuits, after the individual devicessuch as the transistors have been fabricated on the semiconductorsubstrate, they must be interconnected in order to perform the desiredcircuit functions. This interconnection process is generally called“metallization” and is performed using a number of differentphotolithographic, deposition, and removal techniques.

A commonly used process for forming interconnect structures is referredto as a “damascene” process. In a typical damascene process, dielectriclayers are deposited over the devices, followed by the formation ofopenings in the dielectric layers. Conductive materials are thendeposited in the openings. A polish process is used to planarize theconductive materials with the surfaces of the respective dielectriclayers so as to cause the conductive materials to be “inlaid” in therespective dielectric layers.

Copper is typically used for the damascene processes. Copper has lowresistivity, thus the RC delay caused by the resistance in theinterconnect structure is low. However, with the scaling of theintegrated circuits, the dimensions of copper interconnects are alsodown-scaled. When the dimensions of the copper interconnects approachthe mean free path of electrons, the resistivity of the interconnectstructure significantly increases. As a result, the RC delay from theinterconnect structure significantly increases.

Various methods have been explored to reduce the resistivities of theinterconnect structures. For example, diffusion barrier layers, whichare used to prevent copper from diffusing into neighboring low-kdielectric layers, typically have high resistivities. Methods forforming thinner barrier layers are thus used. Also, the scattering ofelectrons at the boundaries of the copper grains contributes to theincrease of the resistivity, and thus various methods have been proposedto increase the copper grain size, hence reducing the scattering ofelectrons at the grain boundaries.

With the constant reduction in the size of the interconnect structures,methods for lowering resistivity are always demanded. Particularly, asthe dimensions of interconnect structures become smaller and smaller,phenomena that used to be insignificant begin to contribute more to theoverall resistivity. Accordingly, new methods adjusting for thesefactors are needed.

SUMMARY

In accordance with one aspect of the present invention, an integratedcircuit structure includes a dielectric layer, an opening in thedielectric layer, an oxide-based barrier layer directly on sidewalls ofthe opening, and conductive materials filling the remaining portion ofthe opening.

In accordance with another aspect of the present invention, a damasceneinterconnect structure includes a dielectric layer, a copper line in thedielectric layer and an oxide-based metal compound layer between thecopper line and the dielectric layer, wherein the oxide-based metalcompound layer adjoins the copper line and the dielectric layer.

In accordance with yet another aspect of the present invention, a methodfor forming an integrated circuit structure includes providing adielectric layer, forming an opening in the dielectric layer, forming anoxide-based barrier layer in the opening, and filling a conductivematerial in the opening to form an interconnect structure.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1A illustrates an elastic scattering of an electron at a surface ofa metal line;

FIG. 1B illustrates a diffusion scattering of an electron at a surfaceof a metal line;

FIGS. 2 through 7 are cross-sectional views of intermediate stages inthe manufacture of a preferred embodiment;

FIG. 8 illustrates a variation of the preferred embodiment having a dualdamascene structure;

FIG. 9 illustrates the cumulative probability of vias having resistancesgreater than a certain value;

FIG. 10 illustrates the cumulative probability of metal lines havingsheet resistances greater than a certain value; and

FIG. 11 illustrates the scattering behavior of electrons in a via and ametal line.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

Electrons flowing in a metal line scatter when they meet the surfaces,or interfaces, between the metal line and the enclosing materials. Thescattering behavior of electrons varies according to the type ofenclosing material. FIGS. 1A and 1B illustrate two scattering behaviors.FIG. 1A illustrates an elastic scattering. Electrons hitting a surface 1at an angle θ are elastically bounced at a substantially same angle θ.Therefore, the mobility of the electrons is substantially not changed. Ascattering factor P can be defined as 1 for an elastic scattering. FIG.1B schematically illustrates diffuse scatterings, wherein an electronhitting the surface 1 at a small angle θ may be scattered at a greaterangle α, β, or γ. Therefore, the mobility of the electron is reduced.The scattering factor P is less than 1 for a diffuse scattering.

Non-elastic scattering causes surface-scattering-induced resistivity.The Fuchs-Sondheimer model and the Dingle model both predict that asurface-scattering-induced resistivity is related to the scatteringfactor P. A greater scattering factor P results in a smallersurface-scattering-induced resistivity, hence the overall resistivity ofthe metal line is smaller. Conversely, a smaller scattering factor Presults in a greater surface-scattering-induced resistivity, hence theoverall resistivity of the metal line is greater. Therefore, it can bederived that if the surface of a conductor provides a more elasticscattering for electrons, the surface-scattering-induced resistivity andthe overall resistivity will be reduced.

It has been found that an electron has a more elastic scattering whenthe enclosing material comprises metal oxide. Accordingly, aninterconnect structure having a greater scattering factor and a methodfor forming the same are provided. The intermediate stages ofmanufacturing a preferred embodiment of the present invention areillustrated. The variations of the preferred embodiments are thendiscussed. Throughout the various views and illustrative embodiments ofthe present invention, like reference numbers are used to designate likeelements.

FIGS. 2 through 7 illustrate a preferred embodiment of the presentinvention, wherein a single damascene process is discussed. By slightlychanging the formation process, however, the solution provided by thepreferred embodiment of the present invention can be applied to dualdamascene processes. FIG. 2 illustrates the formation of an opening 4 ina dielectric layer 2. Dielectric layer 2 and an underlying dielectriclayer 8 are preferably formed over a substrate (not shown), and may bean inter-layer dielectric (ILD) layer or an inter-metal dielectric (IMD)layer. In the preferred embodiment, dielectric layer 2 has a lowdielectric constant (k value), wherein the k value is preferably lessthan about 3.5. The preferred formation methods include spin-on,chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomiclayer deposition (ALD), sub-atmospheric CVD (SACVD), low pressure CVD(LPCVD), and other known deposition techniques. A conductive feature 6formed in dielectric layer 8 is schematically shown to illustrate howthe subsequently formed metal line is connected to other conductivefeatures. Conductive feature 6 may be a contact plug, a via or a metalline.

Depending on where the opening 4 is located in the interconnectstructure, opening 4 may be a trench opening or some other opening forforming a metal feature, such as a via opening, a contact opening, andthe like. Preferably, opening 4 is formed by etching dielectric layer 2.

FIG. 3 illustrates the formation of an (diffusion) oxide-based barrierlayer 10 covering the sidewalls and the bottom of the opening 4.Preferably, the thickness T of the barrier layer 10 is less than about300 Å, and more preferably between about 5 Å and 100 Å.

In the preferred embodiment, barrier layer 10 is deposited on thedielectric layer 2 and in opening 4. The preferred materials includecopper oxide, tantalum oxide, titanium oxide, tungsten oxide, rutheniumoxide, rhodium oxide, cobalt oxide, manganese oxide and combinationsthereof. The preferred deposition methods include CVD, ALD, lowtemperature CVD (LTCVD), LPCVD, PVD, and the like. In an exemplaryembodiment, barrier layer 10 comprises tantalum oxide, and is formedusing PVD. The preferred process conditions include a chamber pressureof about 0.5 mtorr, and process gases containing argon, oxygen andnitrogen. The deposition is preferably performed at a temperature ofabout −80° C. to about 450° C. In other embodiments, a thin metal layeris deposited, and the metal layer is then oxidized in anoxygen-containing ambient, which preferably includes molecularcomponents such as O₂, O₃, N₂O, NO₂, NO, and combinations thereof.

In yet other embodiments, barrier layer 10 comprises oxynitrides such ascopper oxynitride, tantalum oxynitride, titanium oxynitride, tungstenoxynitride, ruthenium oxynitride, rhodium oxynitride, cobalt oxynitride,manganese oxynitride, and combinations thereof. Similarly, barrier layer10 may be deposited in an environment containing both nitrogen andoxygen using commonly used methods such as CVD, PECVD, LPCVD, PVD, ALD,and the like. Alternatively, oxynitride barrier layer 10 may bedeposited by depositing a thin metal layer, and then nitridating andoxidizing the surface of the thin metal layer in an environmentcontaining both nitrogen and oxygen.

Optionally, a copper oxide layer 12 is further formed on the barrierlayer 10 if the barrier layer 10 is not a copper oxide layer. Theresulting structure is shown in FIG. 4. Copper oxide layer 12 may bedeposited using PVD, CVD, ALD, and the like. Alternatively, copper oxidelayer 12 can be formed by forming a thin copper layer and in-situoxidizing the copper layer. The thickness of the copper oxide layer 12is preferably less than about 300 Å.

Referring to FIG. 5, a copper seed layer 14 is formed. Depending on thestructure formed in previous steps, copper seed layer 14 may be formedon barrier layer 10 or the optional copper oxide layer 12. As is knownin the art, copper seed layer 14 may be formed by PVD, ALD, CVD, orother commonly known methods.

FIG. 6 illustrates the formation of a metal line 16 in opening 4. Metalline 16 preferably comprises copper or copper alloys. However, othermetals such as aluminum, silver, tungsten, and/or other well-knownalternatives, can also be used. The preferred formation methods includeelectro or electroless plating, although other commonly used methods canalso be used. A chemical mechanical planarization (CMP), also sometimesreferred to as a chemical mechanical polish, is performed to removeexcess material.

FIG. 7 illustrates an oxide-based cap layer 18 formed on the metal line16. In the preferred embodiment, oxide-based cap layer 18 is formed byoxidizing metal line 16 and an exposed portion of the seed layer 14 inan oxygen-containing environment. In alternative embodiments, anoxide-based metal compound may be deposited on metal line 16 to form thecap layer 18. Oxide-based cap layer 18 preferably comprises copperoxide, tantalum oxide, titanium oxide, tungsten oxide, copperoxynitride, tantalum oxynitride, titanium oxynitride, tungstenoxynitride, ruthenium oxynitride, rhodium oxynitride, and combinationsthereof.

The above-discussed embodiment illustrates a single damascene process.One skilled in the art will realize that a dual damascene process mayalso be performed with the teaching of the preferred embodiment to forma dual damascene structure as shown in FIG. 8, which comprises a metalline 16 connected to a via 20. One skilled in the art will also realizethe materials and process steps for forming the structure by identifyingthe like reference numerals and comparing them with the previouslydiscussed embodiment.

It is noted that an oxide-based material 10 exists between twoconductive features 6 and 16. The resistance of oxide-based material 10thus affects the resistance of the corresponding interconnect structure.An experiment has been conducted to form a first via chain including10,000 vias connected in series, wherein each of the vias has thestructure shown in FIG. 8.

The experiment results are shown as solid triangles in FIG. 9, whereinthe x-axis shows the resistance of vias, and the y-axis shows thecumulative probability of vias having resistances greater than a certainvalue. Each of the vias includes an oxide-based barrier layer comprisingTaN_(x)O_(y), wherein x is about 0.3, and y is about 0.05. As acomparison, a second via chain having a similar structure as the firstvia chain is formed, wherein the barrier layers in the second via chainare formed of TaN. The measurement results are shown as hollowedcircles. It is noted that the resistance of vias having TaN orTaN_(x)O_(y) barrier layers have substantially the same resistance,indicating that the oxide-based barrier layer does not cause theundesired increase in resistance.

FIG. 10 illustrates how an oxide-based layer adjoining a metal lineaffects the sheet resistance of metal lines, wherein the cumulativeprobability is shown as a function of sheet resistance Rs. Similarly,results obtained from metal lines having TaN_(x)O_(y) in the barrierlayers are shown as solid triangles, while results obtained from metallines having TaN in the barrier layers are shown as hollow circles. Themetal lines have a length of about 12,000 μm. It is noted that the sheetresistances Rs of metal lines having TaN_(x)O_(y) in the barrier layersare smaller. This indicates that the preferred embodiment of the presentinvention has a greater effect on long metal lines.

One possible reason for the greater effect on metal lines than on viasmay be found in FIG. 11, which illustrates a cross-sectional view ofFIG. 7 along a plane across a line A-B, although the real reason is notclear. An additional via 30 with an oxide-based barrier layer 32 isfurther shown on the metal line 16. As electrons flow in a long metalline 16, the elastically reflected electrons may continue to moveforward with substantially no mobility loss. Vias, however, are moretopographical, and even an elastic reflection can result in a loss ofthe mobility. For example, an electron 34 has a great mobility loss whenreflected on a surface of the barrier layer 32. Therefore, lessimprovement in resistivity is observed on vias.

The preferred embodiment of the present invention is fully compatiblewith existing integrated circuit fabrication processes. Further, noadditional cost is involved.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

1. A method for forming an integrated circuit structure, the methodcomprising: forming a dielectric layer; forming an opening in thedielectric layer; forming an oxide-based barrier layer on sidewalls ofthe opening; forming a copper oxide layer on the barrier layer; andforming conductive materials disposed in the opening, wherein theoxide-based barrier layer is between the conductive materials and thesidewalls of the opening, and the copper oxide layer is between theoxide-based barrier layer and the conductive materials.
 2. The method ofclaim 1, wherein the oxide-based barrier layer further comprises amaterial selected from the group consisting of rhodium oxide, copperoxynitride, and a combination thereof.
 3. The method of claim 1, whereinthe oxide-based barrier layer further comprises a material selected fromthe group consisting of copper oxide, tantalum oxide, titanium oxide,tungsten oxide, ruthenium oxide, tantalum oxynitride, titaniumoxynitride, tungsten oxynitride, ruthenium oxynitride, rhodiumoxynitride, and a combination thereof.
 4. The method of claim 1, whereinthe oxide-based barrier layer further comprises a material selected fromthe group consisting of cobalt oxynitride, manganese oxynitride, and acombination thereof.
 5. The method of claim 1, wherein the oxide-basedbarrier layer further comprises a material selected from the groupconsisting of cobalt oxide, manganese oxide, and a combination thereof.6. The method of claim 1, wherein the oxide-based barrier layer is anon-copper oxide layer.
 7. The method of claim 1 further comprisingforming an oxide-based cap layer on the conductive materials.
 8. Themethod of claim 1, wherein the conductive materials comprise copper. 9.The method of claim 1, wherein the oxide-based barrier layer furthercomprises a portion at a bottom of the opening.
 10. A method for formingan integrated circuit structure, the method comprising: forming adielectric layer; forming an opening in the dielectric layer; forming anoxide-based barrier layer on sidewalls of the opening, wherein theoxide-based barrier layer comprises a material selected from the groupconsisting essentially of cobalt oxynitride, manganese oxynitride, andcombinations thereof; and conductive materials disposed in the opening.11. The method of claim 10 further comprising forming a copper oxidebetween the conductive materials and the barrier layer.
 12. The methodof claim 10 further comprising forming an oxide-based cap layer on theconductive materials.
 13. The method of claim 12, wherein theoxide-based cap layer comprises same metals as in the conductivematerials.
 14. The method of claim 10, wherein the conductive materialscomprise copper.
 15. The method of claim 10, wherein the forming theoxide-based barrier layer further comprises forming a portion of theoxide-based barrier layer at a bottom of the opening.
 16. A method forforming an interconnect structure, the method comprising: forming adielectric layer; forming an oxide-based metal compound layer in thedielectric layer; forming a copper oxide layer on the oxide-based metalcompound layer; and forming a copper line on the copper oxide layer andin the dielectric layer, the copper oxide layer being between the copperline and the oxide-based metal compound layer.
 17. The method of claim16 further comprising forming an oxide-based cap layer on the copperline.
 18. The method of claim 16, wherein the oxide-based metal compoundlayer further comprises a material selected from the group consisting ofrhodium oxide, copper oxynitride, and a combination thereof.
 19. Themethod of claim 16, wherein the oxide-based metal compound layer furthercomprises a material selected from the group consisting of copper oxide,tantalum oxide, titanium oxide, tungsten oxide, ruthenium oxide, cobaltoxide, manganese oxide, tantalum oxynitride, titanium oxynitride,tungsten oxynitride, ruthenium oxynitride, rhodium oxynitride, and acombination thereof.
 20. The method of claim 16, wherein the oxide-basedmetal compound layer further comprises a material selected from thegroup consisting of cobalt oxynitride, manganese oxynitride, and acombination thereof.